About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Materials Aging and Compatibility: Experimental and Computational Approaches to Enable Lifetime Predictions
|
| Presentation Title |
Irradiation Effects on Carriers Dynamics in GaAs and Si PiN Photodiode |
| Author(s) |
Xiaoyu Guan, Michael Tonks |
| On-Site Speaker (Planned) |
Xiaoyu Guan |
| Abstract Scope |
This work investigates the lifetime behavior of Si and GaAs PiN diodes under intense photon and electron irradiation, emphasizing their relevance in optoelectronics and RF power integrated circuits. GaAs PiN diodes exhibits superior radiation stability than Si when subjected to a 100 MeV photon pulse under forward bias. Under reverse bias, GaAs diodes demonstrate fast switching capabilities and integration advantages despite lower breakdown voltages. Our analysis reveals that photon-induced ionization significantly affects the internal current, electric field, and charge distribution within the diode, particularly through electron irradiation and Shockley–Read–Hall (SRH) recombination processes in the intrinsic region. Crucially, the high electron mobility of GaAs facilitates rapid recovery after photon exposure, contributing to improved device stability under radiation. This presentation will address a critical gap in existing literature by providing direct comparisons of short-term electron irradiation effects on GaAs and Si PiN diodes, offering valuable insights for radiation-hardened device applications. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Modeling and Simulation, |