About this Abstract |
| Meeting |
MS&T26: Materials Science & Technology
|
| Symposium
|
Advanced Materials for Harsh Environments
|
| Presentation Title |
Single Event Effect Sensitivity of GaN Devices with Femtosecond Pulsed Laser Probing |
| Author(s) |
Jackson Adler, Yuxin Du, Jianan Song, Sergei Stepanoff, Ani Khachatrian, Rongming Chu, Fan Ren, Stephen J Pearton, Aman Haque, Douglas E. Wolfe |
| On-Site Speaker (Planned) |
Jackson Adler |
| Abstract Scope |
Gallium nitride-based electronics are expected to be highly radiation tolerant because of the wide bandgap, high bond-strength and dynamic annealing features of the material. However, these features may not offer immunity to single event effects, which is a unique damage mode in space applications. This study examines single event effect degradation in GaN junction field effect transistors as well as Ohmic and Schottky diodes using pulsed laser exposure for controllable characterization required to explore the fundamentals behind single event sensitivity. The single event transients occur on nano-second and peak transient responses were observed at the gate-source and gate-drain boundaries in JFETs and at the mid-channel region in both diode types, correlating directly with areas of exposed n-GaN and elevated electric field strength. These findings suggest that exposed n-type GaN layers represent critical vulnerability points requiring mitigation strategies for radiation-hardened GaN device design. |