About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Printed Electronics and Additive Manufacturing of Advanced Functional Materials and Devices—From Processing Concepts to Applications
|
| Presentation Title |
Flexible Amorphous Homojunction Transistors Printed from Eutectic Liquid Metal Alloys |
| Author(s) |
William J. Scheideler |
| On-Site Speaker (Planned) |
William J. Scheideler |
| Abstract Scope |
Ultrathin 2D metal oxides are high-performance transparent conducting materials capable of overcoming traditional limitations of inorganic flexible electronics. Thermodynamically favorable synthesis of 2D oxides at liquid metal interfaces offers potential for printing large areas at unprecedented speed and sub-nanometer precision. Here, we engineer the amorphous phase of 2D oxides via alloying of ternary indium tin oxide and ultralow deposition temperatures (120 – 160C) via In-Sn eutectics. We rapidly assemble vertical 2D homojunctions with electrostatically favorable grading from high density of states (DOS) front channels to lower DOS back-channels. Detailed materials characterization reveals how this platform enhances electron mobility while improving resilience under bias-stress in metal oxide transistors. Thin film transistors based on amorphous 2D homojunctions achieve excellent mobility (30 cm2/Vs), steep switching (SS<100 mV/dec), and 10X better bias-stress. These homojunction architectures are demonstrated in flexible ITO transistors on polyimide substrates, showing their potential for high performance flexible inorganic electronics. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Additive Manufacturing, Nanotechnology |