About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Microstructure-Sensitive Design and Advanced Characterization: An MPMD/SMD Symposium Honoring David T. Fullwood
|
| Presentation Title |
HR-EBSD analysis of thin films and microelectronic devices |
| Author(s) |
Tim Ruggles |
| On-Site Speaker (Planned) |
Tim Ruggles |
| Abstract Scope |
High resolution electron backscatter diffraction (HR-EBSD) is regularly used to map residual stress and dislocation content in metals as a supplement to the microstructural characterization of conventional EBSD. However, HR-EBSD is also relevant when applied to thin films and microelectronics failure where conventional EBSD is less relevant. This talk will explore the application of HR-EBSD analysis to semiconductor materials including failure analysis in microelectronics and defect detection for novel film growing techniques.
This paper describes objective technical results and analysis. Any subjective views or opinions that might be expressed in the paper do not necessarily represent the views of the U.S. Department of Energy or the United States Government. Sandia National Laboratories is a multimission laboratory managed and operated by National Technology and Engineering Solutions of Sandia, LLC., a wholly owned subsidiary of Honeywell International, Inc., for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-NA-0003525. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Thin Films and Interfaces, |