About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials III
|
| Presentation Title |
Low-Temperature, Low-Pressure Cu–Cu Direct Bonding Enabled by Electroplated Ultra-Fine-Grained Copper |
| Author(s) |
chih-wen Chiu, Cheng-Yi Liu |
| On-Site Speaker (Planned) |
chih-wen Chiu |
| Abstract Scope |
The 5G and AI technologies drive an exponential increase requirement in computing ability, interconnection density, and advanced packaging technologies. Low T and low P Cu–Cu direct bonding is recognized as a next-generation interconnection(3D/3.5D IC) solution. The significant advantages include lower contact resistance, minimal signal attenuation, and superior thermal dissipation. We have developed an electroplated ultra-fine-grained copper (UFG-Cu) with random crystallographic orientation, applicable to Cu films, through-via filling, and Cu pillar structures. The as-deposited UFG-Cu inherently exhibits low surface roughness, enabling direct Cu–Cu bonding at 90 °C and 0.8 MPa under ambient atmospheric conditions, without requiring CMP. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Copper / Nickel / Cobalt, Other |