About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Thermodynamics for Sustainability: An EPD Symposium in Honor of Kazuki Morita
|
| Presentation Title |
Determination of Critical Thermodynamic and Kinetic Parameters for SiC Solution Growth via Traveling Solvent Method |
| Author(s) |
Sakiko Kawanishi, Wei-Ting Chen, Ryunosuke Hashimoto, Takeshi Yoshikawa, Hiroyuki Shibata |
| On-Site Speaker (Planned) |
Sakiko Kawanishi |
| Abstract Scope |
SiC is increasingly adopted as a next-generation power semiconductor material. The solution growth of SiC has been investigated as a technique that facilitates high-quality crystal growth owing to its proximity to thermal equilibrium. However, quantitative studies on solute transport phenomena in solution, linked to crystal growth interface stabilization, are lacking. This study examined the solute transport phenomena using Cr-based and Fe-based solvents. We investigated transport phenomena under diffusion control using the travelling solvent method. By analyzing transport phenomena of Cr–Si–C and Fe–Si–C solutions between SiC substrates at 1600 to 2000 ºC, interdiffusion coefficients were obtained and thermodynamic evaluations based on solid-liquid partitioning were performed. The interdiffusion coefficients increased with increasing temperature, ranging from 10-8 to 10-7 m2/s. The temperature dependence of the activity coefficients of Fe and Cr in SiC was determined, establishing a framework to predict the impurity concentration at various temperatures and solvent compositions. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Electronic Materials, Other |