About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advances in Surface Engineering VIII
|
| Presentation Title |
Synthesis of Single Crystal NiTi Films on Si Wafers Using Fe Seed Layers |
| Author(s) |
Amirhossein Shafieizad, Thomas McGowan, Jagannathan Rajagopalan |
| On-Site Speaker (Planned) |
Thomas McGowan |
| Abstract Scope |
NiTi films used in Si based microelectromechanical systems (MEMS) as sensors and actuators are typically polycrystalline. Polycrystalline NiTi exhibits lower recoverable strain and is more prone to fatigue damage than single crystalline NiTi. Therefore, if single crystalline NiTi films can be used in Si based MEMS, it can lead to significant improvement in the performance and reliability. Here, we report a simple method to synthesize single crystal NiTi films on Si (111) wafers using magnetron sputtering. First, a single crystal Fe seed layer is epitaxially grown on the HF-etched Si wafer. Then, an amorphous NiTi film is deposited on the Fe seed layer. Finally, the single crystal NiTi film is generated by crystallizing the amorphous precursor film by thermal annealing. The effect of the deposition and annealing conditions on the quality of the single crystal NiTi film and its phase transformation behavior will be discussed. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Thin Films and Interfaces, Phase Transformations, Other |