About this Abstract |
| Meeting |
MS&T25: Materials Science & Technology
|
| Symposium
|
2025 Undergraduate Student Poster Contest
|
| Presentation Title |
SPU-24: Gallium Oxide for Use as a Ultra Wide Band Gap Semiconductor |
| Author(s) |
Connor Beakes, Robert Lavelle, William Everson, Daniel Erdely, Luke Lyle, Scott Pistner, Mason Cleff, Sammy Hallacher, David Snyder |
| On-Site Speaker (Planned) |
Connor Beakes |
| Abstract Scope |
β-Ga2O3 has emerged as a promising ultrawide bandgap (UWBG) semiconductor for use in high-power electronic devices. Due to its monoclinic crystal structure, substrates with different crystallographic orientations are being evaluated for epitaxial growth and device fabrication. (100) β-Ga2O3 substrates with an intentional miscut are of particular interest because studies have demonstrated step-flow growth of smooth epilayers with fast growth rates and comparatively high mobility values. One of the primary advantages of utilizing β-Ga2O3 materials is the ability to grow crystals or “ribbons” from a melt. In this work, different characterization techniques were implemented to develop a process for manufacturing the EFG ribbons into epi-ready, miscut (100) substrates. This poster will discuss various techniques for assessing the surface topography and structural defects as well as overall crystalline quality within the bulk of the crystal. These characterization methods allow for optimization of processing for better manufacturing in industry and military needs. |