About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials III
|
| Presentation Title |
Effect of Grain Size and Microstructural Heterogeneity on the Bonding Behavior of Electroplated Copper Films |
| Author(s) |
Hsiang-Yu Wei |
| On-Site Speaker (Planned) |
Hsiang-Yu Wei |
| Abstract Scope |
As electronic devices continue to shrink, the demand for high-density 3D integrated circuit packaging increases. Cu-Cu bonding, recognized for its excellent electrical and thermal properties, is essential for such applications. However, the low atomic diffusivity of bulk copper necessitates high bonding temperatures, posing challenges for device reliability. Modifying the grain structure of copper films can effectively enhance diffusion kinetics and lower the bonding temperature. In this context, nanocrystalline Cu—characterized by its high grain boundary density—offers significant advantages by promoting atomic mobility, thereby enabling reliable Cu-Cu bonding at reduced thermal budgets. This study investigates the bonding behavior of electroplated copper films with varying grain sizes, as well as a composite structure combining nanocrystalline and microcrystalline grains. The effects of grain size and microstructural heterogeneity on Cu-Cu bonding performance are systematically evaluated. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Copper / Nickel / Cobalt, Electronic Materials, Joining |