About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Recent Advances in Electron Back-Scattered Diffraction and Related Techniques
|
| Presentation Title |
EBSD to Characterize Plasticity at the Sub-Grain Level: A Complementary Response to HR-DIC |
| Author(s) |
Damien Texier, Julien Genée |
| On-Site Speaker (Planned) |
Damien Texier |
| Abstract Scope |
Slip localization and crystal reorientation are complementary responses to describe plasticity at the sub-grain level. Laser scanning confocal microscopy (LSCM) aimed at characterizing both in-plane and out-of-plane discrete plastic events but also surface topography due to grain reorientation. Discrete slip localization was evidenced on refined EBSD and geometrical necessary dislocations (GND) profiles along slip bands was found complementary to the one obtained using HR-DIC. While slip amplitude is lower in the vicinity of grain boundaries, GND density is greater. Conversely, slip amplitude is maximal in the interior of grains and GND density minimal due to free-escape of dislocations at the free-surface. This demonstrates the important role of GND to accommodate slip incompatibility from grains to grains. Diffraction contrast tomography (DCT) also aimed at assessing intragranular reorientation of grains in the volume. DCT was capable to adequately identify progressive grain reorientation but not discrete grain reorientation revealed by refined EBSD. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Mechanical Properties, High-Temperature Materials |