About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials III
|
| Presentation Title |
The Evolution of the Abnormal Grain Growth and Stress Behavior in Electroplated Cu With and Without Ni/Au Metallization Under Thermal Annealing |
| Author(s) |
LIU-HSIN-CHEN YANG, Cheng-Yi Liu |
| On-Site Speaker (Planned) |
LIU-HSIN-CHEN YANG |
| Abstract Scope |
In the Cu interconnection processes of the 3D/3.5D IC packaging, variations in Cu layout density and CTE mismatch between materials may cause non-uniform structural stress distribution during thermal annealing. This non-uniform stress distribution can lead to delamination, warpage, cracking, and consequently increase wafer breakage rates. This study observed abnormal grain growth in electroplated Cu on ceramic substrates annealed between 300°C and 400°C. When a Ni/Au metallization layers are coated on the Cu surface, the normal stress is significantly reduced compared to bare Cu. However, both samples exhibited increased shear stress after annealing. Using EBSD and XRD techniques, the stress evolution of electroplated Cu films has been investigated at different locations under varying annealing temperatures and surface metallization conditions. With and without Ni/Au metallization, the evolution of the abnormal grain growth and stress behavior in electroplated Cu can be studied in this research. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Computational Materials Science & Engineering, Other |