About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials IV
|
| Presentation Title |
Electromigration behavior of Cu₃Sn interconnects fabricated via Solid-Liquid Interdiffusion |
| Author(s) |
Li-Chen Wu, Albert T. Wu |
| On-Site Speaker (Planned) |
Li-Chen Wu |
| Abstract Scope |
As packaging technologies move toward miniaturization, solder joint dimensions continue to decrease. Cu-Sn intermetallic compounds (IMCs) occupy a larger fraction of the joint region, making the electromigration behavior of IMC-dominated interconnects important for reliability evaluation. Cu₃Sn was selected as the primary phase because it is closely associated with Kirkendall voiding and other reliability failures in Cu-Sn interconnects. A U-groove test structure was fabricated for electromigration testing. Cu was first electroplated into the groove, and reflow was then performed using Sn paste as the Sn source. During reflow, Cu and Sn reacted to form a Cu₃Sn interconnect within the U-groove structure. Current stressing was performed to investigate the microstructural evolution and electromigration behavior of the Cu₃Sn interconnect. The phase evolution during current stressing was systematically characterized. The failure mechanism was subsequently identified based on the observed microstructural changes. |
| Proceedings Inclusion? |
Planned: TMS Journal: Journal of Electronic Materials |
| Keywords |
Phase Transformations, Thin Films and Interfaces, Electronic Materials |