About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Photomechanical and Electromechanical Effects in Structural and Functional Materials
|
| Presentation Title |
Photomechanical Response of 4H and 6H-Silicon Carbide Single Crystals |
| Author(s) |
Arezoo Zare, Jing Shang, Anthony Weaver, John S McCloy |
| On-Site Speaker (Planned) |
Arezoo Zare |
| Abstract Scope |
Silicon carbide (SiC) is a lightweight, high-strength ceramic and a wide-bandgap semiconductor desirable for applications in defense, nuclear, aerospace, and electronics. Like other ceramics, SiC exhibits limited inelastic deformation and is therefore susceptible to cracking and premature failure. This work demonstrates that inelastic mechanical response of SiC can be tuned by illumination at different wavelengths through electronic excitation of carrier populations and changes in defect charge states. In situ nanoindentation under varying illumination wavelengths is used to characterize the activation volume and nucleation rate associated with the underlying mechanisms of inelastic deformation. The role of light-activated defect states in controlling local inelastic deformation is studied by combining nanoindentation results with Raman spectroscopy, deep-level transient spectroscopy (DLTS), and electron microscopy analysis. Both above- and below-bandgap illumination are used to distinguish the effects of band-to-band carrier generation from defect-mediated excitation and to clarify how different electronic excitation pathways influence local deformation behavior. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Ceramics, Characterization, Mechanical Properties |