About this Abstract |
| Meeting |
MS&T26: Materials Science & Technology
|
| Symposium
|
Advances in Emerging Electronic Nanomaterials: Towards Next-Generation Microelectronics
|
| Presentation Title |
Topological Semimetal and Single-Crystalline Cu for Overcoming Resistivity Scaling in Nanoscale Interconnects |
| Author(s) |
Jae Yong Song, Yeji Shin, Giho Jeong |
| On-Site Speaker (Planned) |
Jae Yong Song |
| Abstract Scope |
Copper (Cu) has long served as the primary interconnect material in semiconductor devices owing to its intrinsically low electrical resistivity, arising from its long mean-free-path (~40 nm). However, as interconnect dimensions approach the nanoscale, resistivity increases sharply due to enhanced surface and grain boundary scattering. This scaling limitation has motivated the exploration of alternative materials and microstructural strategies for next-generation interconnects. In this talk, we demonstrate the low-temperature chemical vapor transport synthesis of the topological semimetal molybdenum phosphide (MoP) as a potential interconnect material. Unlike conventional metals, MoP exhibits a reduction in resistivity with decreasing thickness in the nanometer regime, which is attributed to topologically protected surface states that suppress carrier scattering. Additionally, we introduce a charge-transfer-controlled electrodeposition method for single-crystalline Cu interconnects, including vias and trenches across nano- to microscale dimensions. This approach suppresses stochastic nucleation and grain boundary formation, thereby reducing electron scattering and enhancing electrical conductance. |