About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
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| Symposium
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Fundamental Science of Microstructural Evolution and Phase Transformations: An MPMD/FMD/SMD Symposium in Honor of Peter Voorhees
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| Presentation Title |
Device-level Simulation of Resistance-based Memory by Integrating Electrothermal and Phase-field Models with Multiphysics Software |
| Author(s) |
Dongmyung Jung, Jinwoo Oh, Hyesu Gim, Yongwoo Kwon |
| On-Site Speaker (Planned) |
Dongmyung Jung |
| Abstract Scope |
Emerging resistance-based memories such as phase-change memory (PCM) and resistive random-access memory (RRAM) utilize the microstructural evolution of their active materials, whose phases represent data 0 or 1. In contrast, conventional charge-based memories such as DRAM and flash memory use capacitors, whose charging states correspond to data 0 or 1. More specifically, PCM relies on reversible transitions between insulating amorphous and conductive crystalline phases of Ge2Sb2Te5, while RRAM exploits the soft dielectric breakdown of transition metal oxides corresponding to the evolution of conductive filaments. Conventional semiconductor simulators are primarily designed for modeling charge behaviors and lack models for microstructural evolution. Therefore, simulating PCM and RRAM requires the phase-field method. In this presentation, we demonstrate our simulation models for PCM and RRAM, which numerically solve electrothermal, ionic transport, and phase-field equations in a fully coupled manner using COMSOL Multiphysics. We also present examples of collaboration with experimental groups. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Modeling and Simulation, Electronic Materials, Phase Transformations |