About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Alloys and Compounds for Thermoelectric and Solar Cell Applications XIV
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| Presentation Title |
Enhanced Thermoelectric Performance of p-Type Bi2Te3 via Carrier Concentration and Phonon Scattering Modulation |
| Author(s) |
Cheng-Yu Tsai, Hsin-Jay Wu |
| On-Site Speaker (Planned) |
Cheng-Yu Tsai |
| Abstract Scope |
This study enhances the performance of p-type Bi2Te3 by optimizing dopant concentration through deliberate defect engineering. High-resolution powder X-ray diffraction and first-principles calculations reveal that the dopant atoms are incorporated within the Van der Waals gaps. As a result, the material exhibits a remarkable peak power factor of 11 mWm-1K-2, attributed to significantly improved electrical conductivity, leading to a boosted zT of 1.6 at 303 K. Furthermore, a single-leg thermoelectric module based on light-doped Bi2Te3 achieves a conversion efficiency of 3.3% under a 150 K temperature gradient. These findings establish lightly doped p-type Bi2Te3 as a promising alternative to traditional BST materials, underscoring the critical role of defect engineering in advancing thermoelectric performance. |
| Proceedings Inclusion? |
Planned: |