About this Abstract |
| Meeting |
MS&T25: Materials Science & Technology
|
| Symposium
|
Advances in Dielectric Materials and Electronic Devices
|
| Presentation Title |
Effects of Annealing Conditions and Temperatures on Sputtered NiOx Thin Films for Perovskite Solar Cell. |
| Author(s) |
Firdous Ali, Saied Vaezsis, Dawen Li, Subhadra Gupta |
| On-Site Speaker (Planned) |
Subhadra Gupta |
| Abstract Scope |
This study focuses on optimizing DC reactively sputtered nickel oxide (NiOx) as a hole transport layer (HTL) for perovskite solar cells (PSCs). By employing reactively sputtered NiOx instead of spin-coated NiOx, the redox reaction between the HTL and the perovskite (MeO-2PACZ/MAPbI3-XClx) layer in PSCs was minimized. Additionally, the study examines the impact of different annealing conditions on the oxidation state of NiOx HTL and its effect on PSC performance. X-ray diffraction (XRD) analysis revealed that a higher oxygen flow rate and lower deposition rate resulted in a more continuous film with enhanced crystallinity. X-ray photoelectron spectroscopy (XPS) further indicated that Ni2+ ion concentration increased with atmospheric and high-temperature annealing. By systematically optimizing sputtering parameters and annealing conditions, the power conversion efficiency (PCE) of PSCs was significantly improved from 5% to 13.5%, highlighting the importance of controlling the oxidation state of NiOx HTL to enhance PSC performance. |