About this Abstract |
| Meeting |
2021 TMS Annual Meeting & Exhibition
|
| Symposium
|
Phonons, Electrons and Dislons: Exploring the Relationships Between Plastic Deformation and Heat
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| Presentation Title |
Dislocation-limited Thermal Transport in III-Nitride Materials |
| Author(s) |
Lucas Lindsay, Hongkun Li, Riley Hanus, Carlos Polanco, Andreas Zeidler, Gregor Koblmuller, Yee Kan Koh |
| On-Site Speaker (Planned) |
Lucas Lindsay |
| Abstract Scope |
Wide bandgap semiconductors (e.g. III-Nitrides) are of extensive technological importance, especially for high power electronics and light emitting diodes. For such applications, thermal management is a critical challenge as manipulating the electrons inevitably generates Joule’s heating of active regions in device architectures. Here I discuss recent pump-probe transport measurements and first principles calculations providing insights into the interplay of thermal resistance mechanisms limiting III-Nitride functionalities, particularly regarding the role of dislocations. We have demonstrated that phonon-dislocation scattering in GaN is weaker than suggested by previous measurements, likely due to sample and experiment size effects. Nonetheless, dislocation-limited k and k anisotropy are observed in InN and GaN films with highly oriented dislocations at high densities. These efforts suggest novel pathways for tuning k via defect engineering. L.L. acknowledges support from the U. S. Department of Energy, Office of Science, Basic Energy Sciences, Materials Sciences and Engineering Division. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Computational Materials Science & Engineering, Other, Characterization |