About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties, Modeling & Applications
|
| Presentation Title |
Scaling Ultrahigh-Purity Transition Metal Dichalcogenide Monolayers to Industry-Grade through Metal-Stamp Exfoliation |
| Author(s) |
Luke Holtzman, Nicholas Olsen |
| On-Site Speaker (Planned) |
Luke Holtzman |
| Abstract Scope |
Two-dimensional transition metal dichalcogenides (TMDs) have seen major synthesis advances, but achieving industry-benchmark defect densities remains a barrier to adoption, with no scalable manufacturing platform meeting this standard. Two-step flux synthesis is the only technique shown to reach these defect levels, producing bulk metal selenide crystals below 1010 cm-2, but small crystal size and non-scalable exfoliation have confined this quality to academic settings. Here, we combine optimized flux synthesis with metal-stamp exfoliation to produce TMD monolayers simultaneously achieving sub-1010 cm-2 defect densities and areas exceeding 20 mm2. An oxygen-getter during flux synthesis suppresses oxygen substitutional defects, while a modified exfoliation process reduces cleaning damage and enables multi-crystal exfoliation. Scanning probe microscopy confirms the bulk crystal's defect density is preserved through processing. We demonstrate transistor arrays using metal-stamp WSe2 monolayers as channels, the first TMD devices meeting industry point-defect thresholds, charting a path toward defect-free TMD transistors and wafer-scale manufacturing. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Nanotechnology, Electronic Materials, Thin Films and Interfaces |