About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advanced Magnetic Materials for Energy and Power Conversion Applications
|
| Presentation Title |
Ferromagnetic Transition Metal Selenides for Spintronics |
| Author(s) |
Pierre Ferdinand Poudeu |
| On-Site Speaker (Planned) |
Pierre Ferdinand Poudeu |
| Abstract Scope |
Spintronic devices offer benefits in power efficiency and size reduction over current electronics, but require the development of semiconductor materials with favorable magnetic properties. The discovery of p-type and n-type ferromagnetic semiconductors (p-FMSs, n-FMSs) exhibiting high electrical conductivity and Curie temperature (Tc) above 300 K would dramatically improve semiconductor spintronics and pave the way for the fabrication of spin-based semiconducting devices. Here, we show that decoupling both functional sublattices in a low-symmetry semiconductor MPn2Se4 (M = Mn, Fe; Pn = Sb, Bi) enables unprecedented coexistence of high n-type (Pn = Bi) and p-type (Pn = Sb) electrical conduction and ferromagnetism (M = Fe) with Tc=450 K. Our results demonstrate that decoupling magnetic and semiconducting sublattices allows access to high-Tc n-FMSs and p-FMSs as well as helps unveil the mechanism of carrier-mediated ferromagnetism in spintronic materials. The realization of high-Tc n-FMSs and p-FMSs should enable spin-based semiconducting devices. |
| Proceedings Inclusion? |
Planned: Supplemental Proceedings volume |