About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
2026 Technical Division Student Poster Contest
|
| Presentation Title |
SPU-6: Controlled Diazonium Functionalization on Graphene |
| Author(s) |
Cole M. Rabe |
| On-Site Speaker (Planned) |
Cole M. Rabe |
| Abstract Scope |
Controlled defect engineering is essential for tuning graphene’s electronic and quantum-relevant properties. Aryl diazonium chemistry provides a scalable pathway for covalent functionalization, yet achieving predictable control over defect density remains challenging. In this work, graphene was functionalized using 4-nitrobenzenediazonium (4-NBD) across multiple substrate environments, including SiO₂, sapphire, and germanium with varied crystallographic orientations. Reaction concentration was systematically varied to evaluate its influence on defect incorporation. Raman spectroscopy was used to quantify defect densities through analysis of the D-to-G peak intensity ratio. Results show a clear concentration-dependent increase in D/G ratio across all substrates, with distinct substrate-dependent trends indicating that interfacial electronic interactions significantly influence reaction kinetics. These findings demonstrate that diazonium functionalization can be tuned under benchtop conditions and highlight substrate selection as a critical parameter for controlled graphene defect engineering. This work provides a foundation for future efforts toward precise molecular attachment and engineered defect states in two-dimensional materials. |
| Proceedings Inclusion? |
Undecided |
| Keywords |
Thin Films and Interfaces, Characterization, Electronic Materials |