About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials IV
|
| Presentation Title |
Non-destructive Characterization of High Bandwidth Memory |
| Author(s) |
Kwon-Teen Max Chen, Sidhaant Vasudeva, Viktor Nikitin, Jeffrey A. Klug, Nikhilesh Chawla |
| On-Site Speaker (Planned) |
Kwon-Teen Max Chen |
| Abstract Scope |
With high performance computing applications, driven by artificial intelligence, high Bandwidth Memory (HBM) has become an important solution in advanced packaging. It consists of a multilayered 3D Integrated Circuit Device connecting different Random Access Memory Devices vertically through the use of different interconnects, such as Microbumps and Through Silicon Vias (TSVs). In order understand the type of defects in these devices, x-ray synchrotron laminography, tomography, and lab-scale tomography were conducted to visualize and quantify the unique 3D structure of the HBM. Image analysis and quantitative measurements of misalignment were carried out to understand the role of processing induced fabrication steps on the resulting microstructure. The implications to performance and reliability will be discussed. |
| Proceedings Inclusion? |
Planned: TMS Journal: Journal of Electronic Materials |