About this Abstract |
| Meeting |
MS&T25: Materials Science & Technology
|
| Symposium
|
TMS Frontiers of Materials Award Symposium: Harnessing Charged and Chemical Defects for Exceptional Structural and Functional Properties
|
| Presentation Title |
The origin of photo plasticity in II-V compounds |
| Author(s) |
Maryam Ghazisaeidi |
| On-Site Speaker (Planned) |
Maryam Ghazisaeidi |
| Abstract Scope |
Photoplasticity--the change from ductile to brittle behavior under illumination--is a well-known phenomenon in Group II-VI semiconductors such as ZnS. In this study, we use first-principles calculations to investigate how photoexcited charge carriers influence the structure and motion of dislocation cores. We identify the most stable configurations and charge states of the glide set of Shockley partial dislocations. Our calculations of charge-dependent Peierls barriers show that light exposure inhibits dislocation motion, with marked asymmetries depending on dislocation character (edge vs. mixed) and core composition (Zn-rich vs. S-rich). We also propose experimental strategies to test these predictions. These results advance the understanding of light-induced mechanical behavior in II-VI semiconductors. |