About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Computational Thermodynamics and Kinetics
|
| Presentation Title |
Cluster Dynamics Modeling of Radiation-Induced Charged Point Defects in a GaAs p-i-n Junction |
| Author(s) |
Henry Richard Little, Blas Uberuaga, Christopher Matthews, Xiang-Yang Liu |
| On-Site Speaker (Planned) |
Henry Richard Little |
| Abstract Scope |
In the modern electronics landscape, the development of accurate device-level models incorporating environmental factors is paramount. To advance the development of radiation-tolerant optoelectronic devices, we have developed a cluster dynamics model of GaAs incorporating charged point defects using the in-house software, Centipede. We present a set of simulations of point defect dynamics in a hypothetical p-i-n junction subject to irradiation. The local populations of point defect types and charge states are found to strongly depend on doping level of the region, whether it is p- or n-type. We further observe variations in point defect profiles of over an order of magnitude across the intrinsic region. Based on these results, we expect point defects to play a dramatic role in device performance, impacting laser confinement through shifts in the material’s dielectric coefficient. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Computational Materials Science & Engineering, Modeling and Simulation, Electronic Materials |