About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advanced Real Time Imaging for Materials Science and Processing: 10th Anniversary
|
| Presentation Title |
Al Effects on the SiC Solution Growth Interface Studied by In-situ Observation |
| Author(s) |
Ryunosuke Hashimoto, Masakatsu Hasegawa, Sakiko Kawanishi |
| On-Site Speaker (Planned) |
Ryunosuke Hashimoto |
| Abstract Scope |
Silicon carbide (SiC) is a promising power semiconductor material due to its superior physical properties. Although solution growth method has the potential to yield high-quality single crystals, suppressing step bunching, which induces crystal defects, remains a challenge. While previous studies have reported that the Al addition to the solvent suppresses bunching, the underlying mechanism is unclear. Furthermore, the influence of step behavior during melt-back (the pre-growth dissolution process of the SiC seed substrate) on subsequent growth has not been discussed. Herein, this study investigates the effects of Al addition on the step behavior from dissolution to growth by using our original in-situ observation technique for high-temperature solution growth interface. Without Al, step pinning was observed during dissolution, which caused bunching that persisted into the subsequent growth phase. Conversely, with Al, neither pinning nor bunching occurred. These results demonstrate that Al addition stabilizes the interface even from the melt-back. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Solidification, Electronic Materials, Process Technology |