About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Radiation Effects in Solid-State Materials: An SMD Symposium Honoring William J Weber
|
| Presentation Title |
Atomistic mechanisms governing irradiation-induced phase transition in gallium oxide |
| Author(s) |
Flyura Djurabekova, Ru He, Tomas Fernandez Bouvier, Chloe Nozais, Aleksi Leino |
| On-Site Speaker (Planned) |
Flyura Djurabekova |
| Abstract Scope |
Irradiation of semiconductor materials with ions over a broad energy range inevitably generates defects in the crystal lattice. The accumulation of these defects during irradiation leads to a gradual loss of crystallinity. While the resulting disorder typically drives the system toward amorphization, certain materials exhibit fundamentally different behavior. In systems where one of the crystal polymorphs adopts a defective spinel structure, the buildup of disorder can instead promote crystal-to-crystal phase transitions. These transitions—enabled by favorable atomic rearrangements—allow the material to temporarily preserve long-range crystallinity.
We focus on the atomic-scale mechanisms governing such crystal-to-crystal phase transitions, which occur without passing through a amorphous state, as is observed during irradiation of the beta-phase. Nevertheless, we also observe that even this radiation-resistant phase can undergo amorphization under specific ion irradiation conditions. The presented results contribute to a broader understanding of optimal strategies for engineering of gallium oxide for advanced microelectronic applications. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Modeling and Simulation, Phase Transformations, Ceramics |