| Abstract Scope |
Structural, optical, and electrical properties of 5% Dysprosium (Dy)-doped molybdenum trioxide (MoO₃) thin films were investigated in this study. The films were grown using Pulsed Laser Deposition technique on Si/SiO2 substrate. Films were annealed in H₂/Ar (5%/95%) atmosphere for different durations. Orthorhombic α-MoO₃ phase, with Dy doping which caused lattice distortion and reduced crystallite size was confirmed by X-ray diffraction. Reduction annealing led the XRD peaks to shift, which indicated unit cell contraction due to O2 vacancy formation. Raman spectroscopy revealed characteristic Mo–O vibrational modes, with reduced intensity due to oxygen deficiency. UV-Vis spectroscopy showed a almost 10% bandgap decrease, furthermore, electrical measurements demonstrated a significant increase in conductivity, because of enhanced carrier concentration. Field-effect transistor (FET) testing confirmed the material’s retained semiconducting nature and further investigations are underway. These findings demonstrate that controlled reduction annealing enables precise tuning of MoO3:Dy's optoelectronic properties for applications in nanoelectronics and optoelectronic applications. |