About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties, Modeling & Applications
|
| Presentation Title |
Radiative Color Centers in h-BN via Controlled Electron-Beam Irradiation |
| Author(s) |
Nirmal Singh, Karishma Begum, Don A Lucca, Thomas Poirier, James H Edgar, Ritesh Sachan |
| On-Site Speaker (Planned) |
Nirmal Singh |
| Abstract Scope |
Color-center engineering in hexagonal boron nitride (h-BN) is a promising route for developing quantum emitters and nanoscale photonic devices. Here, radiative centers were created in h-BN flakes by electron-beam irradiation (5-20) keV. The electron penetration depth, lateral size of the electron interaction volume, and secondary-electron generation distribution in the h-BN structure were estimated by Monte Carlo simulations. Raman spectroscopy shows the crystalline characteristics of the pristine h-BN lattice via the characteristic E2g phonon mode ~1367 cm⁻¹. Post-irradiation, the Raman intensity decreased, and the full width half maximum increased from 9 to 13 cm⁻¹, showing enhanced phonon scattering, local strain, and lattice disorder caused by defect formation. After electron-irradiation, there was green-to-red photoluminescence emission, suggesting formation of optically active defect states. Non-negative matrix factorization was applied to separate the pristine h-BN response from overlapping defect-related emission components, to distinguish between photoemission associated with nitrogen and boron vacancies-related centers, and impurity-vacancy complexes. |
| Proceedings Inclusion? |
Planned: |