About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials IV
|
| Presentation Title |
Suppressing Sn Whisker Growth by Interlayer Engineering: Effect of Residual Stress, Alloying and Interface Chemistry |
| Author(s) |
Sadhna Singh, Piyush Vijay Jagtap |
| On-Site Speaker (Planned) |
Sadhna Singh |
| Abstract Scope |
In this work, effect of various interlayers and residual stress in Cu metallization layer on Sn whisker growth is studied. The Cu metallization layers were deposited on Si using E-beam evaporation and magnetron sputtering under UHV conditions. The residual stress in Cu films was varied by thermal cycling under high vacuum and measured in-situ during cycling using a wafer curvature technique. The experimental results show that the high residual tensile stress in the Cu layer, significantly decreased the Cu6Sn5 IMC growth rate, thereby, suppressing the whisker growth. Furthermore, alloying Cu with Ag showed a similar inhibiting effect on Sn whisker growth, whereas, addition of 10nm Ag interlayers between Cu and Sn accelerated the whisker growth. The results show that the IMC growth kinetics are very sensitive to residual stress in Cu films, alloying and Cu/Sn interface chemistry which can be leveraged to manage the whisker growth from Sn. |
| Proceedings Inclusion? |
Planned: TMS Journal: Journal of Electronic Materials |
| Keywords |
Electronic Materials, Characterization, Thin Films and Interfaces |