| Abstract Scope |
Mo-Si-B alloys, considered promising candidates for high-temperature applications, exhibit excellent oxidation resistance above 1600 °C due to the formation of a protective borosilicate surface layer. However, in the intermediate temperature range of 650-800 °C, volatile MoO₃ forms and evaporates before the protective scale can develop, leading to Mo loss. In this study, we demonstrate that laser surface exposure, without remelting or additional coating processes, can promote the rapid formation of protective oxide scales, thereby minimizing Mo evaporation. Detailed microstructural analysis of both fast- and slow-formed oxide layers provides quantitative insights into the interactions between crystal defects (e.g., dislocations, stacking faults) and atomic diffusion or segregation behavior. |