About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advances in Ceramic Materials and Processing
|
| Presentation Title |
Layered Ceramics in the In-Ti-Zn-O System: Synthesis and Dielectric Properties of In1+x(Ti1/2Zn1/2)1-xO3(ZnO)m (m = 3, 5, 7; x = 0.5) |
| Author(s) |
Victor Emmanuel Alvarez Montano, Subhash Sharma, Francisco Brown, Javier Hernandez Paredes, Ofelia Hernández Negrete, Guillermo Tiburcio Munive, Alejandro Durán |
| On-Site Speaker (Planned) |
Victor Emmanuel Alvarez Montano |
| Abstract Scope |
We report the synthesis, structural, and dielectric characterization of three ceramic compounds, ITZO-III, ITZO-V, and ITZO-VII, prepared via the solid-state reaction method. These compounds crystallize in the rhombohedral space group, R-3m, and are isostructural with the homologous InGaO₃(ZnO)m (IGZO) series with m = odd number. The synthesis was carried out at 1200 °C in air. Structural characterization by X-ray diffraction (XRD) confirmed the formation of a single phase for each compound. Scanning electron microscopy (SEM) revealed microstructures composed of irregular shaped grains, with grain size slightly dependent on the composition. Dielectric characterization at room temperature (RT) in the frequency range of 100 Hz to 1 MHz showed that ITZO-III has the highest dielectric constant (~117 at 100 kHz) and a reasonably low dielectric loss (~0.15), while ITZO-V and ITZO-VII presented moderate dielectric properties. These results suggest ITZO-type ceramics are promising dielectric candidates for multilayer ceramic capacitors and related electronic applications. |
| Proceedings Inclusion? |
Planned: |