About this Abstract |
| Meeting |
MS&T25: Materials Science & Technology
|
| Symposium
|
Advances in Dielectric Materials and Electronic Devices
|
| Presentation Title |
Study of In Situ Doping of Diamond with Nitrogen and Silicon for Quantum Applications |
| Author(s) |
Lakshmi Narayanan Ramasubramanian , Raj N. Singh |
| On-Site Speaker (Planned) |
Raj N. Singh |
| Abstract Scope |
Diamond containing optically active defect centers such as nitrogen-vacancy (N-V) and silicon-vacancy (Si-V) display unusual optical emission characteristics for applications in quantum devices and magnetic field sensing. Generally, nitrogen is introduced in diamond by ion implantation followed by high temperature annealing to create the N-V centers, which also create undesirable lattice defects degrading quantum properties. The processing of diamond by Microwave Plasma Enhanced Chemical Vapor Deposition is promising for in situ doping of nitrogen and/or Si thereby eliminating the damage caused by ion implantation. The challenge is to process high-quality in situ doped diamond for improved performance and sensitivity for quantum systems. The processing approaches to synthesize N- and Si-doped diamond containing defect centers by MPECVD are studies, and characterized by scanning electron microscopy, Raman and photoluminescence spectroscopies, and optically detected magnetic resonance techniques. These results along with the promise of diamond for quantum applications will be presented and discussed |