About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties, Modeling & Applications
|
| Presentation Title |
Rapid Integration of Diamond with Silicon Chips via Laser-Processed SiC and Q-Carbon Interlayers |
| Author(s) |
Saud Alssaidy, Jagdish Narayan, Elizabeth Kautz, Bharat Gwalani |
| On-Site Speaker (Planned) |
Saud Alssaidy |
| Abstract Scope |
The development of artificial intelligence (AI) and electronic chip systems faces significant challenges due to dense circuits and high-power consumption, particularly in wide-bandgap devices, which require high-thermal-conductivity materials to dissipate heat and prevent thermal failure of circuit components. Diamond has an exceptional thermal conductivity of 2,000 W/m·K. However, direct integration of diamond with silicon chips is challenging due to lattice-constant mismatches and differences in phonon dispersion. We propose forming thin interfacial layers of SiC and Q-carbon to join Si to diamond substrates, with thermal conductivity exceeding 500 W/m·K and an intermediate phonon dispersion between the substrates, thereby serving as a phonon bridge. This process is completed in a few steps using laser energy to form thin SiC and Q-carbon layers that offer excellent thermal conduction and mechanical stability and potentially reduce TBR. It represents an efficient solution for future high-power 3-D AI chips and other microsystems operating under extreme conditions. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Thin Films and Interfaces, Joining |