About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Radiation Effects in Solid-State Materials: An SMD Symposium Honoring William J Weber
|
| Presentation Title |
Interface Analysis of AlxGa1-xN/GaN materials Post Swift Heavy Ion Irradiation |
| Author(s) |
Mahjabin Mahfuz, Rongming Chu, Maik Lang, James Burns, Xing Wang, Miaomiao Jin |
| On-Site Speaker (Planned) |
Mahjabin Mahfuz |
| Abstract Scope |
AlGaN/GaN High-Electron-Mobility Transistors are among the leading candidates for next-generation semiconductor devices in space applications, where exposure to swift heavy ions (SHIs) can significantly impact device reliability. Maintaining a sharp AlxGa1-xN /GaN interface is critical, as it enhances carrier concentration and electron mobility in the two-dimensional electron gas resulting in increased drain current and higher gain. This study investigates the effects of 985 MeV Au ion irradiation on the AlxGa1-xN/GaN interfaces using Scanning Transmission Electron Microscopy and Atom Probe Tomography (APT). Energy-dispersive X-ray spectroscopy (EDS) concentration profiles acquired across the Al0.75Ga0.25N layer within the GaN matrix reveals Al concentration profile broadening, accompanied by increased Ga and decreased Al post irradiation. Consistent with these observations, APT measurements show a broadening of the Al concentration profile after SHI exposure. Furthermore, quantitative analysis of the Al concentration isosurface demonstrates interface roughness increase, providing evidence of irradiation-induced elemental interdiffusion and interface degradation. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Other, |