About this Abstract |
| Meeting |
MS&T25: Materials Science & Technology
|
| Symposium
|
Materials and Manufacturing in Low Earth Orbit (and Beyond)
|
| Presentation Title |
Towards Lifetime Predictions for Widegap Semiconductors in Low Earth Orbit |
| Author(s) |
Wolfgang Windl |
| On-Site Speaker (Planned) |
Wolfgang Windl |
| Abstract Scope |
We present a multiscale modeling framework to predict radiation-induced degradation and single event effects (SEEs) in widegap semiconductors operating in low Earth orbit (LEO). First-principles calculations are used to extract defect formation energies and charge transition levels for GaN and Ga₂O₃ under ionizing conditions. These are incorporated into TCAD simulations that model energy deposition and electron-hole cloud formation due to energetic heavy ion strikes typical of galactic cosmic radiation. The simulations resolve the spatial and temporal evolution of charge generation and recombination following single particle impacts, enabling assessment of SEE susceptibility and defect-mediated degradation pathways. This physics-based approach links atomistic defect energetics to transient device behavior under radiation exposure, providing predictive insight into long-term performance shifts. The framework supports mission-specific lifetime predictions for widegap power and sensor devices, addressing the increasing need for radiation-hardened electronics in next-generation satellite and space platforms. |