About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials III
|
| Presentation Title |
Electromigration Behavior of Cu-Doped Nanotwinned Ag Joints for Low-Vacuum Direct Bonding Applications |
| Author(s) |
Cheng-Yi Lai, Peng-Hsiang Hsu, Fan-Yi Ouyang |
| On-Site Speaker (Planned) |
Cheng-Yi Lai |
| Abstract Scope |
With continued semiconductor miniaturization, Cu-to-Cu direct bonding has emerged as a promising solution to mitigate electromigration-induced reliability issues in interconnects. However, this process typically requires a high-vacuum environment to prevent surface oxidation. To enable bonding under low-vacuum conditions, Cu-doped nanotwinned Ag was employed to improve oxidation resistance while maintaining mechanical integrity. In this study, highly (111)-oriented nanotwinned Ag joints doped with Cu were bonded using thermal compression. Electromigration testing was performed on the bonded joints at 160 °C under a current density of 3.0 × 10⁵ A/cm² for 168 hours. The microstructural evolution and void formation during electromigration were systematically investigated. Results show that Cu doping effectively suppresses electromigration-induced damage and enhances bonding reliability, offering a promising pathway for high-performance, low-temperature interconnects in advanced packaging. The failure mechanisms of Cu-doped Ag and pure Ag joints under electromigration stress are compared and discussed in detail. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Joining, |