About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials III
|
| Presentation Title |
Silver-Copper Mixed Sinter Joint Property of Silicone Carbide Device Power Modules |
| Author(s) |
Won Sik Hong, Mi Song Kim |
| On-Site Speaker (Planned) |
Won Sik Hong |
| Abstract Scope |
To achieve low-cost and high-heat dissipation compared to Ag sintering, a study on the optimization of the sintering process using Ag-Cu mixed paste was conducted. 1200 V 60 A SiC MOSFET device was sintered with 75%silver-25%copper mixed paste on silicon nitride ceramic substrate under pressure conditions. The initial bonding strength of the 75%Ag-25%Cu sinter joint was 64 MPa which through optimization of the pressure sintering process. To compare reliability with the Sn-3.0Ag-0.5Cu solder joint, 100%Ag and 100%Cu sinter joints, 1000 thermal cycles (TST) were tested under the conditions of -40-125 ℃ and 15 min dwell time. After TST, the changes in bonding strength, on-resistance (RDS(ON)), and microstructure of Ag-Cu sinter joint was compared with the SAC305 solder joint, and Ag and Cu sinter joints. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Characterization, Electronic Materials, Joining |