About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties, Modeling & Applications
|
| Presentation Title |
Q-carbon Seeded 2D Heteroepitaxial Growth of Diamond Thin Films on Nickel Heterostructure and The Comparison With Homoepitaxial Diamond Thin Films |
| Author(s) |
Pranay Bhasker Kalakonda, Naveen Narasimhachar Joshi, Sriram Srinivasan, Fahad Munshe, Ratnakar D Vispute, Roger Narayan, Jagdish Narayan |
| On-Site Speaker (Planned) |
Pranay Bhasker Kalakonda |
| Abstract Scope |
High quality single-crystalline diamond thin films see many applications in advanced electronics. We report growth of heteroepitaxial and homoepitaxial diamond films and a parallel has been drawn between them. Heteroepitaxial diamond films were grown using CVD technique, on (0001) and (11-20) oriented sapphire substrates with Q-carbon seed layer and Ni buffer layer, by DME. Diamond nucleation barrier is eliminated by 5-10nm thick Q-carbon seed layer. Homoepitaxial diamond films were grown in MPCVD reactor on CVD synthesized diamond substrates, and supplied by Blue Wave Semiconductors Inc. HR-XRD rocking curves and linewidth of diamond peaks obtained by Raman and PL measurements establish quality of films. The impurities in the films were measured by other characteristic peaks in Raman and PL measurements. HR-SEM images show surface morphology. The surface roughness and depth profiling were characterized from AFM analysis. Cross-sectional HRTEM, EBSD and XRD phi-scans were used to establish heterostructure growth and orientation relationships. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Characterization, Thin Films and Interfaces |