About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
2D Materials – Preparation, Properties, Modeling & Applications
|
| Presentation Title |
Influence of Step Geometry on Graphene Growth from Structured Cubic Silicon Carbide |
| Author(s) |
Michael Paul Macisaac, Salil Bavdekar, Richard Hennig, Douglas Spearot, Ghatu Subhash |
| On-Site Speaker (Planned) |
Michael Paul Macisaac |
| Abstract Scope |
Graphene’s exceptional electronic properties make it a promising material for future electronics, but complex synthesis methods hinder widespread adoption. Silicon carbide (SiC) thermal decomposition is a compelling route for graphene growth. In particular, growing graphene nanoribbons on structured SiC enables precise control over morphology and properties. While growth on hexagonal SiC has been studied, cubic SiC (3C-SiC) remains underexplored. The effects of 3C-SiC surface geometry and environmental conditions on graphene quality are not well understood. Our work addresses this gap by investigating how 3C-SiC surface structure and synthesis environment influence graphene formation. We use molecular dynamics simulations to model thermal decomposition and graphene growth, capturing the interplay between synthesis parameters. To balance accuracy and efficiency, we employ a machine-learned interatomic potential trained on ab initio data. This enables detailed exploration of atomistic mechanisms underlying SiC decomposition and graphene formation, guiding the rational design of structured 3C-SiC templates for graphene growth. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Modeling and Simulation, Phase Transformations, |