About this Abstract |
| Meeting |
2027 TMS Annual Meeting & Exhibition
|
| Symposium
|
Photomechanical and Electromechanical Effects in Structural and Functional Materials
|
| Presentation Title |
Recombination-Enhanced Dislocation Motion in GaAs: Glide Suppression and the Unresolved Driving Force for Climb |
| Author(s) |
Kunal Mukherjee |
| On-Site Speaker (Planned) |
Kunal Mukherjee |
| Abstract Scope |
Dislocations in III-V semiconductors are recombination centers for minority charge carriers. This recombination process also facilitates dislocation glide and climb even at room temperature through recombination-enhanced defect reactions (REDR). Understanding REDR is important because these reactions limit the reliability of optoelectronic devices such as lasers and LEDs, which play a crucial role in transmitting data in telecom and data centers. We show recombination-enhanced dislocation glide in GaAs films grown on silicon substrates, and develop methods to suppress it using dilute indium alloying. We also present evidence for recombination-enhanced dislocation climb in these materials and show that slowing carrier recombination can effectively slow this process. Finally, we discuss why climb remains less understood than glide in GaAs, especially because the driving force for climb under carrier recombination itself remains unclear. These open questions underscore the need for a clearer understanding of REDR before robust suppression strategies become possible. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Electronic Materials, Thin Films and Interfaces, |