About this Abstract |
| Meeting |
2020 TMS Annual Meeting & Exhibition
|
| Symposium
|
Advanced Real Time Imaging
|
| Presentation Title |
Sc3N@C80 and La@C82 doped Graphene Photodetectors |
| Author(s) |
Kishan Jayanand, Ravindra Mehta, Srishti Chugh, Anupama Kaul |
| On-Site Speaker (Planned) |
Kishan Jayanand |
| Abstract Scope |
High-performance hybrid graphene photodetectors were prepared with Sc3N@C80 and La@C82 deposited on graphene using electrophoretic deposition technique. The zero-dimensional (0D) metallofullerenes with two-dimensional (2D) graphene resulted in charge transfer processes to enhance the optoelectronic properties. The blue-shift (Δω(+)) in the Raman peaks of the G- and 2D-modes of the hybrids relative to bare graphene confirms that hole-doping is occurring in graphene with Sc3N@C80. In contrast, a red-shift (Δω(-)) in the Raman peaks confirms electron-doping occurs with La@C82. The charge transfer between graphene and metallofullerenes and consequent photocurrent generation over wavelength range of 400 to 1100nm contribute to a responsivity of ~109 AW-1 and ~108 AW-1 for the Sc3N@C80–Graphene hybrid and La@C82–Graphene hybrid, respectively. The hybrid systems also show a high Detectivity and External Quantum Efficiency. To the best of our knowledge, our results represent the first approach towards the fabrication of metallofullerene-graphene based photodetectors which does not require a complicated fabrication process and yields the highest reported values for photodetector device figures of merit. The exceptional performance gains achieved by the hybrid systems confirms the potential of metallofullerene doped graphene hybrid systems for a new class of 0D-2D photonic devices in the future for imaging, surveillance and defense-related application. |
| Proceedings Inclusion? |
Planned: |