About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials III
|
| Presentation Title |
Adhesion Behavior of Ta and TaN Barrier Layers for Cu Metallization in Advanced Packaging |
| Author(s) |
Chin-Yen Chiu, Cheng-Yi Liu, Chia-Hua Lin |
| On-Site Speaker (Planned) |
Chin-Yen Chiu |
| Abstract Scope |
The thermal stability and electromigration are crucial issues in 3D and wafer-level packaging. And the reliable Cu metallization requires barrier layers with strong adhesion to the substrate. This study is focused on the comparison of the adhesion capabilities of pure Ta and TaN as adhesion layers on silicon wafers. And discusses two types of TaN films: (i) direct DC/RF sputtering from a TaN target and (ii) reactive Ta sputtering with proportional N₂/Ar flows. Deposit barrier layers with a thickness of 50 to 300 nm on Si (100) and electroplate with a Cu seed layer to investigate whether the thickness affects adhesion. The adhesion energy and hardness are quantified using nanoindentation and nanoscratch techniques, while XRD, XPS, and TEM confirm phase, stoichiometry, and interface morphology. This work aims to reveal insights into adhesion strength and chemical stability, contributing to improved barrier design for future packaging applications. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Surface Modification and Coatings, Thin Films and Interfaces, Other |