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Meeting 2027 TMS Annual Meeting & Exhibition
Symposium 2D Materials – Preparation, Properties, Modeling & Applications
Presentation Title Intrinsic Nonlinearity Modulation in Two-Dimensional (Cu,Ag)InP2S6 for Selectorless Nonvolatile Memory
Author(s) Feng Yan
On-Site Speaker (Planned) Feng Yan
Abstract Scope we investigated a two-dimensional (2D) van der Waals (vdW) mixed cation crystal Cu0.5Ag0.5InP2S6 (CAIPS) as a switching layer and systematically compared its resistive switching with CuInP2S6 (CIPS) and AgInP2S6 (AIPS). The coexistence of Cu+ and Ag+ ions produces asymmetric out-of-plane diffusion barriers, as confirmed by first-principles density functional theory (DFT) calculations, leading to self-rectifying transport and the intrinsic suppression of leakage in arrays. CAIPS-based devices exhibit stable bipolar resistive switching, a high intrinsic nonlinearity factor (>10 under a V/3 read scheme), a large memory window (>9× at Vread = 0.1 V), and low variability (coefficient of variation down to 5.1%), surpassing the performance of both CuInP2S6 (CIPS) and AgInP2S6 (AIPS). These features, combined with low operational switching voltages, robust endurance, and built-in nonlinearity highlight CAIPS as a promising material for scalable selectorless memory arrays, with direct relevance to energy-efficient neuromorphic and edge-computing architectures.
Proceedings Inclusion? Planned:
Keywords Electronic Materials, Nanotechnology, Computational Materials Science & Engineering

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