About this Abstract |
| Meeting |
MS&T26: Materials Science & Technology
|
| Symposium
|
Advances in Emerging Electronic Nanomaterials: Towards Next-Generation Microelectronics
|
| Presentation Title |
Fabrication and Characterization of SnO2/CdS Quantum Dots Heterojunction for UV-Vis Sensitive Low-Voltage Phototransistors |
| Author(s) |
Prof. Anup K. Ghosh, Nikita K. Kumari, Sandeep Dahiya, Chetna K. Gautam, Bhola N Pal |
| On-Site Speaker (Planned) |
Prof. Anup K. Ghosh |
| Abstract Scope |
In this report, CdS QDs and SnO2 were synthesized via hydrothermal method and characterized. Bottom gate top contact (BGTC) phototransistor has been fabricated with an ion-conducting Li-Al2O3 layer as the gate insulator on p-Si substrate, a SnO2 NPs layer as charge transport layer (CTL) and overcoated CdS QDs layer as photo-absorbing layer (PAL). Parallel Al-electrodes were deposited for drain and source connections.
Electrical output characteristics of the phototransistor have been studied by sweeping the drain voltage (VD) with different constant gate voltages (VG). In the transfer characteristics, VG has been varying with a constant VD. Optical responses of transfer characteristics have been studied under dark, UV, blue and green lights. The parameters such as the on/off ratio and the saturation mobility (μsat) of the fabricated phototransistor have been estimated.
In conclusion, fabricated CdS/SnO2 bilayer heterojunction phototransistor exhibited a promising performance in a low-voltage UV-Vis phototransistor for various applications. |