About this Abstract |
| Meeting |
2026 TMS Annual Meeting & Exhibition
|
| Symposium
|
Electronic Packaging and Interconnection Materials III
|
| Presentation Title |
Grain Boundary Migration–Driven Cu–Cu Bonding at Low Temperature and Pressure Using Atomic-Scale Surface Films |
| Author(s) |
Huang You-Chen, Cheng-Yi Liu |
| On-Site Speaker (Planned) |
Huang You-Chen |
| Abstract Scope |
Cu–Cu direct bonding is a critical technology in the field of high-speed computing. For next-generation 3D/3.5D IC packaging, the next generation Cu-Cu direct bonding demand for low-temperature (<135 °C), low-pressure (<3 MPa), and high-efficiency signal interconnects. In this study, fine-grain Cu films with atomic-scale surface roughness were electroplated. Without the need for complex surface treatments, void-free Cu–Cu bonding was successfully achieved at 100 °C in air ambient with a minimal pressure of 0.8 MPa. Ultrafast grain growth and the ultra-smooth surface promoted grain boundary migration across the bonding interface, enabling robust bonding at 100 °C in air ambient. Electron backscatter diffraction (EBSD) was used to analyze interfacial grain growth, and shear testing confirmed excellent mechanical strength. |
| Proceedings Inclusion? |
Planned: |
| Keywords |
Copper / Nickel / Cobalt, Joining, Other |