Advances in Dielectric Materials and Electronic Devices: Poster Session
Sponsored by: ACerS Electronics Division
Program Organizers: Amar Bhalla, University of Texas; Ruyan Guo, University of Texas at San Antonio; Rick Ubic, Boise State University; Danilo Suvorov, Jožef Stefan Institute
Tuesday 9:00 AM
November 3, 2020
Room: Poster Hall
Location: MS&T Virtual
Concentration Dependent Dielectric Behavior of [In, Ta] Dipole Pair Substituted BaTiO3 Ceramics: Ian Chedzoy1; Evan Merkey1; Natalia Betancur-Granados2; Kaijie Ning1; Jorge Tobón3; Oscar Restrepo3; Holly Shulman1; Steven Pilgrim1; Walter Schulze1; Steven Tidrow1; 1Alfred University; 2Alfred University/Colombia National University Medillin; 3Colombia National University Medillin
Dipole pair concentration dependent dielectric behavior has been investigated using high purity [In, Ta] dipole pair substituted BaTiO3 ceramics. A unique dielectric permittivity evolution is discovered to have a transition from ferroelectric behavior to diffuse phase transition behavior and to relaxor like behavior. Analysis of microstructural, electrical, and optical properties indicate that the unique dielectric performance does not appear to be a strict classic relaxor. Efforts in modeling, which are discussed, are improving our understanding of these unique properties.
Investigation of Relaxor-like Ferroelectrics in [Sc, Ta] Dipole-pair Substituted BaTiO3 Ceramics: Benjamin Conley1; Victoria Pellegrino1; Wesley Senn1; William Hogan1; Kaijie Ning1; Holly Shulman1; Steven Pilgrim1; Walter Schulze1; Steven Tidrow1; 1Alfred University
Electronic devices like capacitors, sensors, transducers, filters, resonators, actuators, etc. can be made more robust and efficient using enhanced relaxor and relaxor-like ferroelectric material properties. Previous material studies based on morphotropic phase boundary (MPB) and polymorphic phase boundary (PPB) have yielded classic relaxor materials, including PMN-PT; however for environmental reasons, Pb based materials need be replaced without reducing a possibly enhancing device properties. Dilute, low concentration, dipole-pair engineering is becoming a novel route for designing relaxor-like ferroelectric materials. In this work, microstructural, electric, dielectric, and optical properties of the [Sc, Ta] dipole-pair substituted BaTiO3 ceramics are investigated and the unique relaxor-like behavior of these materials are reported.
Relaxor-like Behavior in Dipole-Pair [Y, Ta] Substituted BaTiO3 Ceramics: Victoria Pellegrino1; Benjamin Conley1; Kaijie Ning1; Holly Shulman1; Steven Pilgrim1; Walter Schulze1; Steven Tidrow1; 1Alfred University
Relaxor and relaxor-like dielectrics are playing critical roles for advanced electronic devices. Dipolar-pair engineering is a promising route for creating novel relaxor-like dielectrics. In this work, we report dipole-pair [Y, Ta] substituted BaTiO3 ceramics and their relaxor-like behavior. The fabrication of BaTi1-2x[Y, Ta]xO3, x = 0 to 0.5, ceramics is conducted based on the solid-state reaction processing with subsequent characterization reported of material microstructure, optical bandgap, temperature dependent DC resistivity, and temperature/frequency dependent relative permittivity. Dielectric evolution as a function of [Y, Ta] concentration in BaTiO3 ceramics is reported. The dielectric diffuseness behavior originating from specific [Y, Ta] concentrations is observed and considered as a relaxor-like dielectric property that distinguishes itself from traditional relaxor materials. The discoveries from these efforts are anticipated to enable more rapid development for novel relaxor-like ferroelectric materials.
The Synthetic Diamonds Electrical Conductivity with Fractal Correction: Vojislav Mitic1; Goran Lazovic2; Vesna Paunovic3; Ivana Radovic4; Aleksandar Stajcic2; Markus Mohr5; Hans Fecht5; 1University of Belgrade; University of Nis; 2University of Belgrade; 3University of Nis; 4University of Belgrade; VINČA" Institute of Nuclear Sciences - National Institute of the Republic of Serbia; 5Ulm University
Nano synthetic diamonds are considered to be a class of materials with intensively researched electrical conductivity. Favorable electrical properties of diamonds make them excellent candidates for the use in MEMS applied under various conditions. The origin of n-type conductivity at room temperature expressed in ultrafine nano synthesizes diamonds has become a very attractive topic for scientific investigations. Formation of nano-graphite over the grain boundary of diamond crystals strongly influenced the specific conductivity value, as well as any other structural change on the interface between grains. The investigations revealed that the increase of average formed grain size caused sharp decrease in the specific electrical conductivity value. The focus and goal of presented research is to form a connection between fractal approach and electrical conductivity phenomenon, as well as to introduce fractal correction and make bilateral correlation between them.