2D Materials – Preparation, Properties & Applications: Case Studies & Applications
Sponsored by: TMS Functional Materials Division, TMS: Thin Films and Interfaces Committee
Program Organizers: Nuggehalli Ravindra, New Jersey Institute of Technology; Ramana Chintalapalle, University of Texas at El Paso; Gerald Ferblantier, University of Strasbourg - IUT LP / ICube Laboratory - CNRS; Sufian Abedrabbo, Khalifa University; Amber Shrivastava, Indian Institute of Technology Bombay
Wednesday 8:30 AM
March 17, 2021
Room: RM 11
Location: TMS2021 Virtual
Session Chair: Amber Shrivastava, Indian Institute of Technology; Ramana Chintalapalle, University of Texas - El Paso
8:30 AM Invited
Formation of h-BN Ultrathin Films and Heterojunction MIS Diodes by Pulsed Laser Annealing: Siddharth Gupta1; Ritesh Sachan2; Jagdish Narayan1; 1North Carolina State University; 2Oklahoma State University
We present conversion of amorphous BN into single-crystal h-BN ultrathin films by nanosecond laser annealing. Further, metal-insulator-semiconductor (MIS) tunneling diode configuration is achieved by nanosecond laser melting amorphous C/BN (a-BN/a-BN) multilayered films in an undercooled state, thereby zone-refining carbon to form rGO (M)/h-BN(I)/Si (n-type) heterostructures. Improved threshold voltage and low leakage current was observed in MIS (4.4 V) compared to the MS Schottky (0.4 V) architecture. The MIS diode exhibit direct tunneling conduction under low bias, with Fowler-Nordheim tunneling in the high voltage regime, turning the MIS diode ON, with improved rectification and current flow. With these results, we propose the non-equilibrium undercooling-assisted laser annealing pathway to fabricate h-BN/graphene heterostructures for studying emergent physical phenomena in ultrathin FET devices.
8:55 AM Invited
Graphene and Carbon Nanotubes: Key Materials for Electrochemical Energy Materials and Nano Biosensors: Eon Soo Lee1; 1New Jersey Institute of Technology
This talk presents the recent studies on new nanomaterials for advanced electrochemical energy materials and systems, and new electrochemical microdevices for disease detection and diagnosis for biomedical applications in the Advanced Energy Systems and Microdevices Laboratory at NJIT. The graphene-based energy materials research focuses on the non-platinum group of metal (non-PGM) catalysts to replace PGM catalysts for electrochemical-energy systems, such as fuel cells and batteries, and industrial applications such as gas exhaust catalytic converting systems and petroleum-processing systems. Principal research includes synthesizing and characterizing new high-performance non-PGM catalysts based on graphene doped with nitrogen and then with metal organic frameworks, and understanding the fundamental mechanisms of the structures. As a new way of synthesis, we have developed high impact nano wet ball milling method (HI-NWB) in order to make the synthesis process economically viable in a simpler way along with high performance.
9:20 AM Invited
hBN for Quantum Information Sciences: Ritesh Sachan1; 1Oklahoma State University
Materials with color centers have attracted significant attention in recent years due to their capability to contribute to quantum information sciences. These color centers are the crystallographic defects in the materials that act as the source of single photon quantum emission. Owing to the advances in nanoscale fabrication, two-dimensional (2D) materials have shown great potential by hosting defect sites with promising characteristics of single photon emission (SPE). We demonstrate the laser writing of color centers in hBN by nanosecond melt phase growth, and to subsequently investigate the created defect sites and their photoemission. The correlated photoluminescence (PL) properties show defect photoemission peak in the visible spectrum (600-650 nm). With this study, we enable the formation of atomic defects in layered hBN that can function as SFEs in the visible spectrum.
9:45 AM
The Growth of NbSe2 by Molecular Beam Epitaxy for Thermomagnetic Energy Conversion: Peter Litwin1; Sabbir Akhanda1; Mona Zebrajadi1; Stephen McDonnell1; 1University of Virginia
The synthesis of high-quality NbSe2 thin films is of interest for applications in thermomagnetic energy conversion. Molecular beam epitaxy (MBE) is a promising route towards this aim as it provides fine control over growth conditions. For thermomagnetic energy conversion, the 2H phase of NbSe2 is desired. However, a number of competing phases, such as metastable 1T-NbSe2, are found to form during synthesis by MBE. We will report on the effect of processing parameters on the chemical makeup of synthesized thin films, with a goal of optimizing growth conditions for thermomagnetic energy conversion. In-situ X-ray photoelectron spectroscopy and reflection high energy electron diffraction will be performed to analyze the intrinsic chemical composition and growth mode of the synthesized material. To characterize the Nernst coefficient, which quantifies the material’s ability to generate thermomagnetic power, ex-situ measurements will be carried out on NbSe2 films grown on insulating muscovite.