Advanced Microelectronic Packaging, Emerging Interconnection Technology and Pb-free Solder: Poster Session
Sponsored by: TMS Functional Materials Division, TMS: Electronic Packaging and Interconnection Materials Committee
Program Organizers: Christopher Gourlay, Imperial College London; Kazuhiro Nogita, University of Queensland; David Yan, San Jose State University; Mike Wolverton; Babak Arfaei, Ford Motor Company; Andre Delhaise; Mehran Maalekian, Mat-Tech; Mohd Arif Salleh, Universiti Malaysia Perlis
Monday 5:30 PM
February 24, 2020
Room: Sails Pavilion
Location: San Diego Convention Ctr
Session Chair: Chris Gourlay, Imperial College London
D-1 (Invited): Effects of Materials and Package Design on Warpage Control of Semiconductor Devices: Richard Chung1; Hala Shaba1; 1San Jose State University
Warpage of microelectronic devices is a critical design parameter to consider during the package design phase to ensure a robust device assembly process and reliable devices. Warpage deformation results from thermal stress buildup in the package due to selection of molding compounds and their material properties, substrate design and properties, silicon die size and package dimensions needs to be understood to meet certain warpage target requirements. The aim of this project is to compare different material properties and thicknesses of molding compounds to investigate their impact on controlling warpage of a small ball grid array prototype packages. Thermo-mechanical modeling and simulations are conducted to help guide selecting the molding compound material properties. The selection of the molding compound with relatively higher CTE, higher Tg and thicker package design helped control the warpage of this package structure and successfully maintained warpage below 100 µm.
D-2: A Novel Class of Multiscale Nanomaterials-based Thermal Interface Materials for High Temperatures, High Power Density Electronics: Chunhu Tan1; Shuyi Chen1; Tim Lin1; 1Aegistech Technology Inc
This presentation reports a new class of hybrid, silver (Ag) nanomaterial–based TIM paste with elevated operation temperatures. This hybrid Ag-based TIM paste is featured with the incorporation of multiscale (from nano- to micro-size) Ag particles and Ag-nanocoated multi-wall carbon nanotubes (MWCNTs), which will enable a low-temperature, pressure-less bonding process. The sintered joint can provide not only high mechanical strength, but also the ability to “self-heal” should they be stressed to failure. The promising performance of this TIM include wide working temperature range (-60 to 250 degree C), enhanced mechanical/shear strength (>30 MPa) and thermal conductivity (>70W/m·K). In addition, this TIM paste can be directly applied to the current power electric packaging production lines, without application of external pressures and inert protective gases, allowing for a simplified, low-temperature process. This paste also can be used for solar cell metallization layers allowing for resilience to the presence of semiconductor cracks.
Cancelled
D-3: Study of Pore Structure of Nano-silver Paste Sintered Interconnect under Current-stressing: Ingann Chen1; Chiaming Yang1; Pocheng Su1; Potsung Hsieh1; Steve Lienchung Hsu1; 1National Cheng Kung University
With the demand for higher packing density of integrated circuit, the interconnect line width decreases and the current density increases. In general, if the current density is increased to higher than 105 A/cm2, electro-migration phenomenon would become more serious. In this study, the nano-sized silver particle paste developed in our group was hot-pressed at 250°C and 10 Mpa to form a low porosity (~7%) and low-resistivity (2.9*10-8 Ω-m) interconnect (length ~ 20mm, thickness ~ 0.02 mm, and width ~ 0.35 mm). It was found that after 2 days of the 5 ampere hot stage current-stressing tests (at 160°C and ~105 A/cm2 ), the porosity of the cathode decreased from 7% to 5%, and the anode increased from 7% to 12%. When the current-stressing test lasted for 6 days, the porosity of the anode increased to 23%. All these data observed can be correlated with the classical electro-migration phenomenon.