Phase Stability, Phase Transformations, and Reactive Phase Formation in Electronic Materials XXII: Poster Session
Sponsored by: TMS Functional Materials Division, TMS: Alloy Phases Committee
Program Organizers: Hiroshi Nishikawa, Osaka University; Shih-kang Lin, National Cheng Kung University; Chao-hong Wang, National Chung Chung University; Chih-Ming Chen, National Chung Hsing University; Jae-Ho Lee, Hongik University; Zhi-Quan Liu, Shenzhen Institutes of Advanced Technology; Ming-Tzer Lin, National Chung Hsing University; Yee-wen Yen, National Taiwan University of Science and Technology; A.S.Md Abdul Haseeb, Bangladesh University of Engineering and Technology (BUET); Ligang Zhang, Central South University; Sehoon Yoo, Korea Institute of Industrial Technology; Vesa Vuorinen, Aalto University; Yu-Chen Liu, National Cheng Kung University; Ting-Li Yang, National Yang Ming Chiao Tung University
Monday 5:30 PM
March 20, 2023
Room: Exhibit Hall G
Location: SDCC
Session Chair: Hiroshi Nishikawa, Osaka University
C-9: 3D Electromagnetic Analysis and VNA Measurement of High-speed Signal Transmission in HLC-PCBs: Via Stub Effect: Pei-Chia Hsu1; Ying-Chih Chiang1; Shun-Cheng Chang1; Sheng-Wei Wu1; Cheng-Hao Ching1; Cheng-En Ho1; 1Yuan Ze University
The demand of high data rates requires the usage of large bandwidths for high-speed digital signal transmission, and the high-frequency/-speed signal transmission is now being adopted in communication satellites, short-range targeting radars, and web servers to meet such a requirement today. Since the high-frequency/-speed signal integrity has become the critical issues in various product designs, a comprehensive study of the signal transmission performance in transmission lines is of fundamental interest and practice importance. In this study, we investigated the via stub effect on the signal transmission performance at 1–40 GHz frequency bands in high-layer-count printed circuit boards through the finite element analysis method with a 3D electromagnetic simulation software and vector network analyzers measurement. The research results showed that the remaining stub structure can degrade the signal transmission performance, and should be as short as possible, especially in high-frequency signal transmission. Details will be presented in this present work.
C-10: Bi-Sb-Se-Te Phase Equilibria Isothermal Tetrahedron at 400℃: Sinn-wen Chen1; Cheng-chun Ching1; Yohanes Hutabalian1; Chia-chun Chen1; 1National Tsing Hua University
Bi-Sb-Se-Te is one of the most important material systems of thermoelectric applications. The Bi-Sb-Se-Te phase equilibria isothermal tetrahedron at 400℃ is examined in this study. The phase diagrams of its six constituent binary systems, Bi-Sb, Bi-Se, Bi-Te, Sb-Se, Sb-Te, and Se-Te are adopted from literature. The 400℃ phase equilibria isothermal sections of its four constituent ternary systems, Bi-Sb-Se, Bi-Sb-Te, Bi-Se-Te and Sb-Se-Te, are determined by assessment of related results in literature. Bi2Se3-Sb2Se3-Bi2Te3-Sb2Te3 isoplethal section of the 400℃ isothermal tetrahedron is experimentally determined. There are two phases, (Bi,Sb)2(Se,Te)3 and Sb2Se3, and most of the compositional regime is the (Bi,Sb)2(Se,Te)3 phase. The Bi-Sb-Se-Te phase equilibria isothermal tetrahedron at 400℃ is proposed based on the isothermal sections of its constituent ternary system and the experimental results of the quaternary system. A calphad modeling and phase diagram calculation is carrying out.
C-11: Effect of De-twinning on Tensile Strength of Nano-twinned Cu Films: Chiahung Lee1; 1National Central University
Tensile tests were carried on the electroplated Cu films with various densities of twin grain boundary. We found that the strength of the Cu films is highly related to the twin boundary density. The Cu film with a greater twin-boundary density has a larger fracture strength than the Cu film with a lesser twin-boundary density.Moreover, the de-twinning can be observed in the region where necking begins. Furthermore, with the analysis of the TEM images on the nano-twinned structure in the necking region of the fractured Cu films, the de-twinning mechanism attributes to two processes: (1) the ledge formation by the engagement of the dislocations with the twin boundaries and (2) the collapse of the ledges with the opposite twin-boundaries. In conclusion, the plastic deformation of nano-twinned Cu films is governed by the de-twinning of the nano-twinned structure.
C-12: Laser-assisted Die Attach Process for SiC Power Semiconductor: Dongjin Kim1; Jiyoon Youm1; So-Jeong Lee1; Sehoon Yoo1; Minsu Kim1; 1Korea Institute of Industrial Technology
Recent progress in electronic packaging technology for automotive power devices require higher reliability at higher operating temperatures and current densities. Thermal fluctuation caused by manufacturing processes such as die attach, wire bonding, and encapsulation can have a negative impact on module reliability, such as serious damage to packaging materials or module warpage. As a result, reducing thermal damage and stress during the packaging process is critical for power module reliability. Due to the partial heating of the selected area, laser bonding has grown in popularity. When compared to the conventional reflow process, it is possible to reduce thermal damage and warpage on the packages. Using a top-hat shaped infrared laser, a fast die attach process with an Sn-3Ag-0.5Cu preform for the SiC power semiconductor was demonstrated in this study. The laser output and irradiation time were adjusted to range between 5.47 and 7.03 W/mm2 and 1 to 10 s, respectively.