Frontiers in Materials Science, Engineering, and Technology: An FMD Symposium in Honor of Sungho Jin: Process-Property-Performance Correlations: Devices, Circuits, Lead Free Solder & Packaging
Sponsored by: TMS Functional Materials Division, TMS: Biomaterials Committee, TMS: Electronic Packaging and Interconnection Materials Committee, TMS: Nanomaterials Committee, TMS: Thin Films and Interfaces Committee
Program Organizers: Fay Hua, Intel Corporation; Tae-Kyu Lee, Portland State University; Young-Ho Kim, Hanyang University; Roger Narayan, UNC/NCSU Joint Department of Biomedical Engineering; Choong-un Kim, University of Texas at Arlington; Nuggehalli Ravindra, New Jersey Institute of Technology
Wednesday 2:00 PM
March 1, 2017
Location: San Diego Convention Ctr
Session Chair: Young-Ho Kim, Hanyang University; Sufian Abedrabbo, The Petroleum Institute
2:00 PM Introductory Comments
2:10 PM Invited
Harvesting Light from Silicon via Colloid-induced Stressed Interface Processed by Deposition of Sol-Gel-based Silica: Sufian Abedrabbo1; Anthony Fiory2; Nuggehalli Ravindra2; 1The Petroleum Institute; 2New Jersey Institute of Technology
Novel phenomenon of enhanced radiative recombination in indirect band-gap silicon is revealed by engineering a colloid-induced stressed interface. This is achieved by the deposition of sol-gel containing catalysis for silica formation in acidic environment that yields colloidal suspension in the sol that is cured by heat treatment; thus obtaining stressed texture in the silica layer. Band-gap emission from at 1.1 eV has been observed and is believed to be the resultant of these highly inhomogeneous stresses that shield the free-carriers from non-radiative decays by modulating the band-gap. The emission is noted to be two orders of magnitude greater relative to unperturbed silicon, marking the onset of an unexpected behavior and possible new theories. Radiative recombination in Czochralski (CZ) silicon samples are studied as function of strains and stresses levels. Postulate and quantification of the stress and strain modulation of the band-gap is presented.
2:40 PM Invited
Cold-Electron Transport at Room Temperature for Beyond CMOS Electronics: Seong Jin Koh1; 1University of Texas at Arlington
Over last several decades, CMOS scaling has been the driving force in enhancing the performance and packing density of transistors. However, this scaling, the voltage scaling in particular, cannot be continued because of the extremely large OFF-state current when the supply voltage VDD is reduced. The root cause of the large OFF-state current is the Fermi-Dirac electron thermal excitation, which makes thermally excited electrons overcome the OFF-state energy barrier. This talk presents a new method that can effectively suppress the Fermi-Dirac electron thermal excitation without any external cooling and can allow for an effective electron temperature as low as 45 Kelvin at room temperature. Here a quantum well energy state is used as an energy filter, which blocks the transport of thermally excited electrons. An application of the cold-electron transport to single-electron transistors will be presented. Also, the use of cold-electron transport in ultralow heat dissipation electronics will be discussed.
3:10 PM Invited
Reliability Issues of Lead (Pb)-free Solder Technology in Microelectronic Applications: Sung Kang1; 1IBM Corporation
The landmark Directive of RoHS passed by EU in 2002 became effective in 2006 to ban six toxic materials used in electrical and electronic equipment. Since then, this legislation has made a global impact in the electronic industry. The author has significantly contributed last 25 years in the successful implementation of Pb-free solders. In 1995, well before the RoHS legislation, the author has established an IBM-KAIST joint study program to investigate the fundamental topics of Pb-free solder joints used for electronic packaging applications. This program has lasted more than 15 years until 2013, and remarkably accomplished to enhance our basic understandings on many important reliability issues of Pb-free solder interconnections. In this talk, several key findings of the challenging reliability issues of Pb-free solder science & technology are reviewed, including the topics such as interfacial reactions, thermal fatigue, oxidation, minor alloying effects, electromigration, tin whiskers, and others.
3:40 PM Break
3:55 PM Invited
An Integrated Computational Materials Engineering Approach to Electronic Packaging in Pb-free Interconnects: Raymundo Arroyave1; 1Texas A & M University
In this talk, to honor Prof. Jin, I will present some recent developments by my group and by others on the development of phase-field models to describe the microstructure evolution in solder interconnects. I will show how PFMs can be used to describe the dominant mechanisms responsible for the formation and evolution of IMC layers resulting from the reaction between liquid solders and the metallization layers. The talk will also cover more recent modeling approaches that take into account the evolution of IMC layers during operation, by considering electromigration, microstructural evolution under different driving forces, as well as the formation of microvoids responsible for the most important failure modes in solder interconnects. I will finally discuss how current experimental and simulation approaches can potentially be integrated to realize the development of accelerated approaches for the development of joining protocols in the spirit of an Integrated Computational Materials Engineering (ICME) framework.
4:25 PM Invited
Synthesis of Nanocomposites Consisting of High Density Nanoparticles in the Polyimide Films and Their Applications: Young-Ho Kim1; 1Hanyang University
We have developed a simple process to fabricate high density oxide or metallic nanoparticles in the polyimide (PI) films. In this method, the polyamic acid (PAA), a precursor of PI, was reacted with a thin layer of metal film or metal powders and curing was conducted to imidize PAA to PI after soft baking to evaporate the solvent. During curing, high density nanoparticles formed in the PI film. Transmission electron microscopy showed that highly dense nanoparticles such as Cu, Cu2O, and ZnO formed in a polyimide film. The size of nanoparticles varied from 2-4 nm to larger than 10 nm. The particle size, density, and distribution depended on the curing temperature, the curing time, and the curing environment. These nanocomposites can be applied for nanofloating gate Memory devices, bistable memory devices, and optical devices utilizing the high refractive index films. The properties and applications of nanocomposites will be discussed.